Oxide Molecular Beam Epitaxy
In sputter chambers, the material for film growth is a target with the correct stoichiometry, whereas in MBE stoichiometric growth is achieved by tuning the impingment rates of the different elemental sources in an Ultra High Vacuum (UHV) environment. OMBE-Jülich has two electron-beam sources with four source crucibles each, and six effusion cells, four of which are capable of temperatures of up to 2000°C.
In addition, we have an RF plasma source for atomic oxygen. Substrate deposition temperatures of up to 1000°C are possible. In theory, the system is capable of simultaneous deposition of up to eight materials plus oxygen. In practice, we mostly grow 2- or 3-element oxides. However, great flexibility in element sources allows a broad spectrum of materials preparation concurrently without perturbing the UHV necessary for controlled epitaxial growth.
OMBE-Jülich is stationed at the Forschungszentrum Jülich for research use by students and scientists. A second oxide MBE system is stationed at JCNS-MLZ in Garching near Munich as a user facility to offer tailored preparation of thin films for investigation with the neutron reflectometer MARIA and other scattering instruments at the MLZ.
Both MBEs are equipped with in-situ RHEED (Reflection High Energy Electron Diffraction) for active feedback on epitaxial growth modes, a quartz crystal microbalance (QCM) for controlling deposition rates; as well as LEED (Low Energy Electron Diffraction) and AES (Auger Electron Spectroscopy) on an attached buffer line for characterization of the substrates and thin films. Users of OMBE-Jülich can use the AES element for depth-resolved profiles with its in-situ Argon ion sputter gun. This ion gun can also structure samples down to 100µm resolution.
Location: Geb. Nr. 4.8, Room No.: N-318, Ph: 6143
Contact
Dr. Connie Bednarski-Meinke
JCNS-2, PGI-4: Scientific Staff
- Jülich Centre for Neutron Science (JCNS)
- Quantum Materials and Collective Phenomena (JCNS-2 / PGI-4)
Room 306