2023

2023 Veröffentlichungen.

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Master Thesis  ;
Growth optimization of the topological insulator Sb2Te3 employing thermal cracker cells
103p. () = Masterarbeit, Universität Siegen, 2023 BibTeX | EndNote: XML, Text | RIS

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Particle–hole symmetry protects spin-valley blockade in graphene quantum dots
Nature 618(7963), 51 - 56 () [10.1038/s41586-023-05953-5] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Flux-periodic oscillations in the transport properties of core/shell GaAs/InAs nanowires equipped with normal and superconducting contacts
Electronic Properties of 2-Dimensional Systems, EP2DS-MSS, GrenobleGrenoble, France, 10 Jul 2023 - 14 Jul 20232023-07-102023-07-14 BibTeX | EndNote: XML, Text | RIS

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Flux-periodic transport in GaAs/InAs core/shell nanowirebased devices
Germany-Japan Workshop on Recent Developments in Quantum Materials and Nanoscale Devices, WakoWako, Japan, 27 Nov 2023 - 28 Nov 20232023-11-272023-11-28 BibTeX | EndNote: XML, Text | RIS

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Aharonov-Bohm-type oscillations in phase-pure core/shell GaAs/InAsnanowires
Bound States, BudapestBudapest, Hungary, 12 Jun 2023 - 15 Jun 20232023-06-122023-06-15 BibTeX | EndNote: XML, Text | RIS

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Aharonov–Bohm–type oscillations in phase–pure core/shell GaAs/InAs nanowires
DPG Frühjahrstagung, DresdenDresden, Germany, 27 Mar 2023 - 31 Mar 20232023-03-272023-03-31 BibTeX | EndNote: XML, Text | RIS

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Aharonov-Bohm Interference and Phase-Coherent Surface-State Transport in Topological Insulator Rings
Nano letters 23(14), 6347 - 6353 () [10.1021/acs.nanolett.3c00905] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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In-plane magnetic field induced asymmetric magnetoconductance in topologicalinsulator kinks
Electronic Properties of 2-dimensional Systems, EP2DS MSS, GrenobleGrenoble, France, 10 Jul 2023 - 13 Jul 20232023-07-102023-07-13 BibTeX | EndNote: XML, Text | RIS

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High‐Performance of Liquid‐Gated Silicon Nanowire FETs Covered with Ultrathin Layers of Diamond‐Like Tetrahedral Amorphous Carbon
Physica status solidi / A 220(12), 202300024 () [10.1002/pssa.202300024] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Master Thesis  ;
Optimization of Magnetic Topological Insulators by Magneto-Transport Measurements
57p. () = Masterarbeit, RWTH Aachen, 2023 BibTeX | EndNote: XML, Text | RIS

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Optical Properties of MoSe 2 Monolayer Implanted with Ultra-Low-Energy Cr Ions
ACS applied materials & interfaces 15(29), 35321 - 35331 () [10.1021/acsami.3c05366] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Putting High-Index Cu on the Map for High-Yield, Dry-Transferred CVD Graphene
ACS nano 17(2), 1229 - 1238 () [10.1021/acsnano.2c09253] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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The versatile family of molybdenum oxides: synthesis, properties, and recent applications
Journal of physics / Condensed matter 35(14), 143002 - () [10.1088/1361-648X/acb24a]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Isothermal Heteroepitaxy of Ge 1– x Sn x Structures for Electronic and Photonic Applications
ACS applied electronic materials 5(4), 2268–2275 () [10.1021/acsaelm.3c00112] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Local Alloy Order in a Ge 1 − x Sn x / Ge Epitaxial Layer
Physical review applied 20(2), 024021 () [10.1103/PhysRevApplied.20.024021] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Semiconductor Membranes for Electrostatic Exciton Trapping in Optically Addressable Quantum Transport Devices
Physical review applied 19(4), 044095 () [10.1103/PhysRevApplied.19.044095] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Conductance asymmetry in proximitized magnetic topological insulator junctions with Majorana modes
Physical review / B 108(3), 035424 () [10.1103/PhysRevB.108.035424] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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GeSnOI technology enabling room temperature lasing with GeSn alloys
Silicon Photonics XVIII, San FranciscoSan Francisco, United States, 28 Jan 2023 - 3 Feb 20232023-01-282023-02-03 [10.1117/12.2646181] BibTeX | EndNote: XML, Text | RIS

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Advances in In Situ Boron and Phosphorous Doping of SiGeSn
ECS journal of solid state science and technology 12(6), 064001 - () [10.1149/2162-8777/acd720]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Nanosecond laser annealing of pseudomorphic GeSn layers: Impact of Sn content
Materials science in semiconductor processing 163, 107549 - () [10.1016/j.mssp.2023.107549] BibTeX | EndNote: XML, Text | RIS

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Effect of surface gallium termination on the formation and emission energy of an InGaAs wetting layer during the growth of InGaAs quantum dots by droplet epitaxy
Nanotechnology 34(14), 145601 - () [10.1088/1361-6528/acabd1] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Synapses with homo/hetero-synaptic plasticity enabled by ferroelectric polarization modulated Schottky diodes
International conference on neuromorphic, natural and physical computing, NNPC, HannoverHannover, Germany, 25 Oct 2023 - 27 Oct 20232023-10-252023-10-27 [10.34734/FZJ-2024-01219] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Synapses with Homo/Hetero-Synaptic Plasticity Enabled by Ferroelectric Polarization Modulated Schottky Diodes
International conference on neuromorphic, natural and physical computing, NNPC, HannoverHannover, Germany, 25 Oct 2023 - 27 Oct 20232023-10-252023-10-27 [10.34734/FZJ-2024-01220] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Impact of synthesis temperature and precursor ratio on the crystal quality of MOCVD WSe 2 monolayers
Nanotechnology 34, 20 () [10.1088/1361-6528/acb947] Embargoed OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Si–Ge–Sn alloys grown by chemical vapour deposition: a versatile material for photonics, electronics, and thermoelectrics
Applied physics / A 129(3), 235 () [10.1007/s00339-023-06478-4] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Au/YBa2Cu3O7-x heterostructures for microwave applications
High temperature superconductors in high frequency fields, HTSHFF2023, Giardini NaxosGiardini Naxos, Italy, 10 Sep 2023 - 13 Sep 20232023-09-102023-09-13 [10.34734/FZJ-2024-01277] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Induced Superconductivity in Hybrid Au/YBa2Cu3O7-x Electrodes on Vicinal Substrates
[10.34734/FZJ-2024-01313] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Toward Steep Slope Cryogenic Transistors for Quantum Computing
13th International WorkShop on New Group IV Semiconductor Nanoelectronics, SendaiSendai, Japan, 23 Jan 2023 - 24 Jan 20232023-01-232023-01-24 [10.34734/FZJ-2024-00966] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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High Performance 5 nm Si Nanowire FETs with a Record Small SS = 2.3 mV/dec and High Transconductance at 5.5 K Enabled by Dopant Segregated Silicide Source/Drain
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), KyotoKyoto, Japan, 11 Jun 2023 - 16 Jun 20232023-06-112023-06-16 [10.23919/VLSITechnologyandCir57934.2023.10185373]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Improved performance of FDSOI FETs at cryogenic temperatures by optimizing ion implantation into silicide
Solid state electronics 208, 108733 - () [10.1016/j.sse.2023.108733] BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Contribution to a conference proceedings  ;  ;  ;  ;  ;
Improved performance of FDSOI FETs at cryogenic temperatures by optimizing ion implantation into silicide
EUROSOI-ULIS, TarragonaTarragona, Spain, 10 Mar 2023 - 12 Mar 20232023-03-102023-03-12 5.1 () BibTeX | EndNote: XML, Text | RIS

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Coherent charge oscillations in a bilayer graphene double quantum dot
Nature Communications 14(1), 7911 () [10.1038/s41467-023-43541-3] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Robust and Fragile Majorana Bound States in Proximitized Topological Insulator Nanoribbons
Nanomaterials 13(4), 723 - () [10.3390/nano13040723] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Selective Area Epitaxy of Quasi-1-Dimensional Topological Nanostructures and Networks
Nanomaterials 13(2), 354 - () [10.3390/nano13020354] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Phase-Selective Epitaxy of Trigonal and Orthorhombic Bismuth Thin Films on Si (111)
Nanomaterials 13(14), 2143 - () [10.3390/nano13142143] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Dissertation / PhD Thesis  ;
Development and Characterization of self-catalyzed Core/Multi-Shell Nanowires towards Quantum Light Sources
142 p. () = Dissertation, RWTH Aachen, 2023 BibTeX | EndNote: XML, Text | RIS

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Single in situ Interface Characterization Composed of Niobium and a Selectively Grown (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ Topological Insulator Nanoribbon
arXiv () [10.48550/ARXIV.2312.07325] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Vertical gate-all-around SiGeSn/GeSn/SiGeSn nanowire nFETs
Intern. Conf. Solid State Devices and Materials, SSDM, NagoyaNagoya, Japan, 5 Sep 2023 - 8 Sep 20232023-09-052023-09-08 PS 1-13 () BibTeX | EndNote: XML, Text | RIS

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Vertical GeSn/SiGeSn GAA Nanowire n-FETs with High Electron Mobility
2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT), VLSI-TSA, HsinchuHsinchu, Taiwan, 17 Apr 2023 - 20 Apr 20232023-04-172023-04-20 BibTeX | EndNote: XML, Text | RIS

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Vertical GeSn/SiGeSn GAA Nanowire n-FETs with High Electron Mobility
2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT), HsinchuHsinchu, Taiwan, 17 Apr 2023 - 20 Apr 20232023-04-172023-04-20 IEEE 1-2 () [10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134252] BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Master Thesis  ;
Magnetic investigation of group-IV alloys using magnetotransport measurements
81p. () = Masterarbeit, RWTH Aachen, 2023 BibTeX | EndNote: XML, Text | RIS

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On the Performance of Low Power Cryogenic Electronics for Scalable Quantum Information Processors *
2023 IEEE Nanotechnology Materials and Devices Conference (NMDC), PaestumPaestum, Italy, 22 Oct 2023 - 25 Oct 20232023-10-222023-10-25 IEEE 440-445 () [10.1109/NMDC57951.2023.10343713] BibTeX | EndNote: XML, Text | RIS

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Toward Low‐Power Cryogenic Metal‐Oxide Semiconductor Field‐Effect Transistors
Physica status solidi / A 220(13), 2300069 () [10.1002/pssa.202300069] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Supercurrent in Bi4Te3 Topological Material-Based Three-Terminal Junctions
Nanomaterials 13(2), 293 - () [10.3390/nano13020293] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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„Investigation of Si-based GeSn/SiGeSn Semiconductors for Thermoelectric Applications“
67p. () = Masterarbeit, RWTH Aachen, 2023 BibTeX | EndNote: XML, Text | RIS

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Shadow-wall epitaxy for all-in-situ fabrication of compound-semiconductor-based nanodevices
10th NRW Nano Conference, DortmundDortmund, Germany, 23 May 2023 - 24 May 20232023-05-232023-05-24 BibTeX | EndNote: XML, Text | RIS

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Realization of fully independent complete field-effect devices grown all-in-situ with the innovative Shadow Wall Epitaxy technique
Micro and Nano Engineering Conference 2023, BerlinBerlin, Germany, 25 Sep 2023 - 28 Sep 20232023-09-252023-09-28 BibTeX | EndNote: XML, Text | RIS

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Vertical GeSn nanowire MOSFETs for CMOS beyond silicon
Communications engineering 2(1), 7 () [10.1038/s44172-023-00059-2] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Electrically pumped GeSn/SiGeSn micro-rings lasers on Si with minimum threshold current of 40 mA
2023 IEEE Silicon Photonics Conference (SiPhotonics), WashingtonWashington, DC, 4 Apr 2023 - 7 Apr 20232023-04-042023-04-07 IEEE - () [10.1109/SiPhotonics55903.2023.10141949] BibTeX | EndNote: XML, Text | RIS

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Characterisation of engineered defects in extreme ultraviolet mirror substrates using lab-scale extreme ultraviolet reflection ptychography
Ultramicroscopy 249, 113720 - () [10.1016/j.ultramic.2023.113720] BibTeX | EndNote: XML, Text | RIS

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Large‐Area Synthesis of Ferromagnetic Fe 5− x GeTe 2 /Graphene van der Waals Heterostructures with Curie Temperature above Room Temperature
Small 19(39), 2302387 () [10.1002/smll.202302387] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Towards high-Tc superconducting qubit with THz plasma frequency
15th International Workshop on High Temperature Superconductors in High Frequency Fields, HTSHFF2023, Giardini NaxosGiardini Naxos, Italy, 10 Sep 2023 - 13 Sep 20232023-09-102023-09-13 [10.34734/FZJ-2024-01278] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Quantum size effects in ultra-thin YBa2Cu3O7-x films
[10.34734/FZJ-2024-01337] OpenAccess  Download fulltext Files  Download fulltextFulltext by arXiv.org BibTeX | EndNote: XML, Text | RIS

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Combining x-ray real and reciprocal space mapping techniques to explore the epitaxial growth of semiconductors
Journal of physics / D 56(24), 245102 - () [10.1088/1361-6463/acc597] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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In situ TEM heating experiments on thin epitaxial GeSn layers: Modes of phase separation
APL materials 11(10), 101117 () [10.1063/5.0167407] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Impact of competing energy scales on the shell-filling sequence in elliptic bilayer graphene quantum dots
Physical review / B 108(12), 125128 () [10.1103/PhysRevB.108.125128] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Enhancement of the Surface Morphology of (Bi0.4Sb0.6)2Te3 Thin Films by In Situ Thermal Annealing
Nanomaterials 13(4), 763 - () [10.3390/nano13040763] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Chemically detaching hBN crystals grown at atmospheric pressure and high temperature for high-performance graphene devices
Nanotechnology 34(47), 475703 - () [10.1088/1361-6528/acf2a0] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Photoemission study of twisted monolayers and bilayers of WSe 2 on graphite substrates
Physical review materials 7(4), 044004 () [10.1103/PhysRevMaterials.7.044004] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Master Thesis  ;  ;
Transport Measurements of Multi-terminal Josephson Junctions
84p. () = Masterarbeit, RWTH Aachen, 2023 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Talk (non-conference) (Invited)
Quantum Transport and Spectroscopy on In-situ Prepared Semiconductor Nanowire Superconductor Junctions
Seminar, Tohoku UniversitySendai, Tohoku University, Japan, 10 Feb 20232023-02-10 BibTeX | EndNote: XML, Text | RIS

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Andreev Bound States and Flux-Periodic Supercurrent in In-situ Prepared Semiconductor Nanowire Superconductor Junctions
EU Japan Workshop on Spintronics and Quantum Transformation, FZ JülichJülich, FZ Jülich, Germany, 7 Aug 2023 - 10 Aug 20232023-08-072023-08-10 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Talk (non-conference) (Invited)
Phase-Coherent Transport in Multi-Terminal Topological Insulator-Based Nanostructures
Institute Seminar (online), University of Southern CaliforniaLos Angeles, University of Southern California, USA, 22 Sep 2023 - 22 Sep 20232023-09-222023-09-22 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Conference Presentation (Invited)
Transport in topological insulator nanoribbon-based hybrid structures
Germany-Japan Workshop on Recent Developments in Quantum Materials and Nanoscale Devices, RIKENWako, RIKEN, Japan, 27 Nov 2023 - 28 Nov 20232023-11-272023-11-28 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;  ;  ;  ;  ;  ;
Tuning the supercurrent distribution in parallel ballistic graphene Josephson junctions
Physical review applied 20(5), 054049 () [10.1103/PhysRevApplied.20.054049] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;
Anomalous temperature dependence of multiple Andreev reflections in a topological insulator Josephson junction
Superconductor science and technology 36(2), 024002 - () [10.1088/1361-6668/aca4fe] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;
Charge carrier density dependent Raman spectra of graphene encapsulated in hexagonal boron nitride
Physical review / B 107(7), 075420 () [10.1103/PhysRevB.107.075420] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Conference Presentation (Other)  ;  ;  ;  ;  ;  ;  ;
Low contact resistance of NiGeSn on n-GeSn
EUROSOI-ULIS 2023, TarragonaTarragona, Spain, 10 May 2023 - 12 May 20232023-05-102023-05-12 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;  ;  ;
Tailoring the dielectric screening in WS2–graphene heterostructures
npj 2D materials and applications 7(1), 29 () [10.1038/s41699-023-00394-0] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Poster (After Call)  ;  ;  ;  ;  ;  ;  ;  ;
Towards the Quantum-Anomalous-Hall-Effect in MagneticTopological Insulator Structures
DPG Frühjahrstagung, DresdenDresden, Germany, 27 Mar 2023 - 31 Mar 20232023-03-272023-03-31 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;
Phonon-mediated room-temperature quantum Hall transport in graphene
Nature Communications 14(1), 318 () [10.1038/s41467-023-35986-3] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;
Probing Enhanced Electron-Phonon Coupling in Graphene by Infrared Resonance Raman Spectroscopy
Physical review letters 130(25), 256901 () [10.1103/PhysRevLett.130.256901] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;
Twist angle dependent interlayer transfer of valley polarization from excitons to free charge carriers in WSe2/MoSe2 heterobilayers
npj 2D materials and applications 7(1), 58 () [10.1038/s41699-023-00420-1] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Preprint  ;  ;  ;  ;  ;  ;
Atomic diffusion-induced polarization and superconductivity in topological insulator-based heterostructures
arXiv () [10.48550/ARXIV.2311.16590] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;  ;  ;
Heterosynaptic Plasticity and Neuromorphic Boolean Logic Enabled by Ferroelectric Polarization Modulated Schottky Diodes
Advanced electronic materials 9(3), 2201155 - () [10.1002/aelm.202201155] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Dissertation / PhD Thesis  ;
Ferroelectric Schottky Barrier Devices on SOI for Neuromorphic Computing
152 p. () = Dissertation, RWTH Aachen, 2023 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Conference Presentation (Invited)
Exploring Low Power Devices with New Materials and Steep Slope Transistors
International conference on Solid-State Devices and Materials, SSDM, NagoyaNagoya, Japan, 5 Sep 2023 - 8 Sep 20232023-09-052023-09-08 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Conference Presentation (Invited)
Gate all around nanowire FETs: Operation from RT to Cryogenic temperatures
International Cooperation On Semiconductors Workshop, ICOS, GrenobleGrenoble, France, 26 Apr 2023 - 28 Apr 20232023-04-262023-04-28 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Conference Presentation (Invited)
Ferroelectric Schottky barrier transistor for neuromorphic computing
The 7th Symposium on Schottky Barrier MOS (SB-MOS) devices, ParisParis, France, 28 Sep 2023 - 29 Sep 20232023-09-282023-09-29 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Talk (non-conference) (Invited)
CMOS devices for quantum and neuromorphic computing
Seminar, Tokyo TechTokyo Tech, Japan, 24 Nov 20232023-11-24 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;
Universal conductance fluctuations in a Bi 1.5 Sb 0.5 Te 1.8 Se 1.2 topological insulator nano-scaled Hall bar structure
Semiconductor science and technology 38(3), 035010 - () [10.1088/1361-6641/acb45f] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

Letzte Änderung: 12.03.2023