Vorträge auf Konferenzen 2017

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Random telegraph noise analysis in Redox-based Resistive Switching Devices Using KMC Simulations
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, KamakuraKamakura, Japan, 7 Sep 2017 - 9 Sep 20172017-09-072017-09-09 BibTeX | EndNote: XML, Text | RIS

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Interfaces formed by ALD metal oxide growth on metal layers
232nd ECS Meeting, National HarborNational Harbor, USA, 1 Oct 2017 - 5 Oct 20172017-10-012017-10-05 BibTeX | EndNote: XML, Text | RIS

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Uncovering switching and failure mechanism in memristive devices by operando spectromicroscopy
Solid State Ionics, PaduaPadua, Italy, 18 Jun 2017 - 23 Jun 20172017-06-182017-06-23 BibTeX | EndNote: XML, Text | RIS

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Oxide-based memristive devices for resistive memories and neuromorphic computing
Workshop on Scientific Directions for Future Transmission Electron Microscopy, JülichJülich, Germany, 17 Oct 2016 - 18 Oct 20162016-10-172016-10-18 BibTeX | EndNote: XML, Text | RIS

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Engineering the nanoscale defect structure of memristive oxide thin films
European Materials Research Meeting, WarsawWarsaw, Poland, 18 Sep 2017 - 22 Sep 20172017-09-182017-09-22 BibTeX | EndNote: XML, Text | RIS

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Oxide based memristive devices: Current status of understanding and future prospects
Fusion Conferences Ldt. , 3rd Functional Oxide Thin Films for Advanced Energy and Information Technology, RomeRome, Italy, 5 Jul 2017 - 8 Jul 20172017-07-052017-07-08 BibTeX | EndNote: XML, Text | RIS

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Engineering the nanoscale defect structure of memristive oxide thin films
European Materials Research Meeting, EMRS, WarsawWarsaw, Poland, 18 Sep 2017 - 21 Sep 20172017-09-182017-09-21 BibTeX | EndNote: XML, Text | RIS

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Engineering defect formation in functional oxide thin films and heterostructures
21st American Conference on Crystal Growth and Expitaxy and18th US Workshop on Organometallic Vapor Phase Epitaxy, ACCGE-21/OMVPE-18, Santa Fe, NMSanta Fe, NM, USA, 30 Jul 2017 - 4 Aug 20172017-07-302017-08-04 BibTeX | EndNote: XML, Text | RIS

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Uncovering switching and failure mechanism in memristive devices by operando spectromicroscopy
PETRA IV Workshop: Imaging of Surface, Interfaces and Nanoobjects: local structure, defects and composition, HamburgHamburg, Germany, 9 Oct 2017 - 11 Oct 20172017-10-092017-10-11 BibTeX | EndNote: XML, Text | RIS

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Uncovering switching and failure mechanisms in memristive devices by in-operando spectromicroscopy
AVS 64th Int. Symp. & Exhibition, Tampa, FloridaTampa, Florida, USA, 29 Oct 2017 - 3 Nov 20172017-10-292017-11-03 BibTeX | EndNote: XML, Text | RIS

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Revealing an atomic nodal plane by LT-UHV-STM investigations on single benzylnaphthoic diimides
Frühjahrstagung der Deutschen Physikalischen Gesellschaft, DresdenDresden, Germany, 19 Mar 2017 - 24 Mar 20172017-03-192017-03-24 BibTeX | EndNote: XML, Text | RIS

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Revealing an atomic nodal plane by LT-UHV-STM investigations on single benzylnaphthoic diisimides
DPG Frühjahrstagung, DresdenDresden, Germany, 19 Mar 2017 - 24 Mar 20172017-03-192017-03-24 BibTeX | EndNote: XML, Text | RIS

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Revealing an atomic nodal plane by LT-UHV-STM investigations on single benzylnaphthoic diisimides
ECOSS, SzegedSzeged, Hungary, 27 Aug 2017 - 1 Sep 20172017-08-272017-09-01 BibTeX | EndNote: XML, Text | RIS

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Mechanism for threshold siwtching in NbOx
7th imec-Stanford International Workshop on Resistive Switching Memories, LeuvenLeuven, Belgium, 21 Sep 2017 - 22 Sep 20172017-09-212017-09-22 BibTeX | EndNote: XML, Text | RIS

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Nanoscale metal oxide thin film devices for future non-volatile memristive applications
European Materials Research Meeting, EMRS, WarsawWarsaw, Poland, 18 Sep 2017 - 22 Sep 20172017-09-182017-09-22 BibTeX | EndNote: XML, Text | RIS

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Sable counter-8 wise and 8 wise switching in OxRAM cells containing TiO2 layer
7th imec-Standford Int. Workshop on Resistive Switching Memories, LeuvenLeuven, Belgium, 7 Sep 2017 - 8 Sep 20172017-09-072017-09-08 BibTeX | EndNote: XML, Text | RIS

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Tuning the Switching Behavior of Nano-Crossbar Reram Devices By Design and Process Treatment of ALD Functional Oxide Layer Stacks
ECS Meeting, National HarborNational Harbor, USA, 28 Aug 2017 - 31 Aug 20172017-08-282017-08-31 BibTeX | EndNote: XML, Text | RIS

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Two Stable Switching Modes with Opposite Polarity in Pt/TiO2/Ti Cells Based on Concurring Phenomena Close to the Pt/TiO2 Interface
232nd ECS Meeting, National HarborNational Harbor, USA, 28 Aug 2017 - 31 Aug 20172017-08-282017-08-31 BibTeX | EndNote: XML, Text | RIS

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Buckminsterfullerene: a probe to reveal hidden surface properties of metals
ECME, DresdenDresden, Germany, 29 Aug 2017 - 2 Sep 20172017-08-292017-09-02 BibTeX | EndNote: XML, Text | RIS

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Buckminsterfullerene: a probe to reveal hidden surface properties of metals
Institute of Physics, Academy of Sciences of the Czech Republic, PraguePrague, Czech, 6 Jun 2017 - 7 Jun 20172017-06-062017-06-07 BibTeX | EndNote: XML, Text | RIS

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Mobile Ions, Reaction Sequence and Passivation in Memristive Devices
XXVI Int. Materials Research Congress, CancunCancun, Mexico, 20 Aug 2017 - 25 Aug 20172017-08-202017-08-25 BibTeX | EndNote: XML, Text | RIS

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Physical Modeling of the Electroforming Process in Resistive-Switching Devices
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, KamakuraKamakura, Japan, 7 Sep 2017 - 9 Sep 20172017-09-072017-09-09 BibTeX | EndNote: XML, Text | RIS

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Influence of the Oxygen Defect Levels on Switching and Current Transport Properties in Valence Change Memory Cells
Solid State Ionics, (SSI 2017), PaduaPadua, Italy, 18 Jun 2017 - 23 Jun 20172017-06-182017-06-23 BibTeX | EndNote: XML, Text | RIS

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Switching dynamics of valence change memory
XXVI Int. Materials Research Congress, IMRC, CancunCancun, Mexico, 20 Aug 2017 - 25 Aug 20172017-08-202017-08-25 BibTeX | EndNote: XML, Text | RIS

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On the origin of the fading memory effect in ReRAMs
27th Int. Symp. on Power and Timing, Modeling, Optimization and Simulation, PATMOS2017, ThessalonikiThessaloniki, Greece, 25 Sep 2017 - 27 Sep 20172017-09-252017-09-27 BibTeX | EndNote: XML, Text | RIS

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Modelling of Resistive Switching Devices based on the Valence Change Mechanism
Non-volatile Memory Technology Symposium, NVMTS, AachenAachen, Germany, 30 Aug 2017 - 1 Sep 20172017-08-302017-09-01 BibTeX | EndNote: XML, Text | RIS

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Switching Dynamics, Limiting, Processes and Parasitic Effects in Resistive Switching Devices based on the Valence Change Mechanism
MULTIFUNCTIONAL OXIDES SYNERGY BETWEEN FUNDAMENTAL SCIENCE AND NOVEL TECHNOLOGIES, INN-CNEA, Buenos AiresBuenos Aires, Argentina, 11 Dec 2017 - 15 Dec 20172017-12-112017-12-15 BibTeX | EndNote: XML, Text | RIS

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Buckminsterfullerene: a probe to disclose hidden surface properties
ICSOS-12, AtlantaAtlanta, USA, 23 Jul 2017 - 28 Jul 20172017-07-232017-07-28 BibTeX | EndNote: XML, Text | RIS

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Surface transformations of SrTiO3 single crystals upon thermal reduction due to incongruent sublimation
6th German-French Workshop on Oxide, Dielectric, and Laser Crystals, Wodil 2017), BordeauxBordeaux, France, 14 Sep 2017 - 15 Sep 20172017-09-142017-09-15 BibTeX | EndNote: XML, Text | RIS

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HR-LC-AFM for detection of current paths on oxides with atomic resolution
DPG Frühjahrstagung, DresdenDresden, Germany, 19 Mar 2017 - 24 Mar 20172017-03-192017-03-24 BibTeX | EndNote: XML, Text | RIS

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Nanofilamentary memristive switches generated at heat-treated TiO2 (110) surfaces
European Materials Research Meeting, E-MRS 2017, WarsawWarsaw, Poland, 18 Sep 2017 - 21 Sep 20172017-09-182017-09-21 BibTeX | EndNote: XML, Text | RIS

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Overcoming the RESET Limitation in Tantalum Oxide-Based ReRAM using and Oxygen Blocking Layer
2017 IEEE International Memory Workshop, (IMW 2017), MontereyMonterey, USA, 14 May 2017 - 17 May 20172017-05-142017-05-17 BibTeX | EndNote: XML, Text | RIS

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Opportunities and Problems of Multistate ReRAMs in Passive Crossbar Arrays
Workshop on Memristor Technology, Design, Automation and Computing (mTDAC) 2017, StockholmStockholm, Sweden, 23 Jan 2017 - 25 Jan 20172017-01-232017-01-25 BibTeX | EndNote: XML, Text | RIS

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Nanoionic Systems for Memristive Devices and Neuromorphic Computing
Materialforschungstag Mittelhessen 2017, GießenGießen, Germany, 28 Jun 2017 - 28 Jun 20172017-06-282017-06-28 BibTeX | EndNote: XML, Text | RIS

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Nanoscale electrochemical systems for memristive devices
Workshop on Electrochemistry in the modern world, Monte IsolaMonte Isola, Italy, 3 Sep 2017 - 6 Sep 20172017-09-032017-09-06 BibTeX | EndNote: XML, Text | RIS

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Nanoscale electrochemistry using oxide dielectric thin films as solid electrolytes
European Materials Research Meeting, WarsawWarsaw, Poland, 18 Sep 2017 - 22 Sep 20172017-09-182017-09-22 BibTeX | EndNote: XML, Text | RIS

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Nanoscale electrochemical studies: How can we use the atomic switch
Int. Symp. on Atomic Switch: Invention, Practical Use and Future Prospects, TsukubaTsukuba, Japan, 27 Mar 2017 - 28 Mar 20172017-03-272017-03-28 BibTeX | EndNote: XML, Text | RIS

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Mechanisms in memristive switching: Fundamental processes and limitations
Int. Conf. on Memristive Materials, Devices & Systems, AthensAthens, Greece, 3 Apr 2017 - 6 Apr 20172017-04-032017-04-06 BibTeX | EndNote: XML, Text | RIS

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Redox-based memristive devices: Fundamental processes and new insights
IWRMN-EDHE 2017, ChengduChengdu, China, 22 May 2017 - 24 May 20172017-05-222017-05-24 BibTeX | EndNote: XML, Text | RIS

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Mobile ions, electrode reactions and passivation in memristive devices
Solid State Ionics, PaduaPadua, Italy, 18 Jun 2017 - 23 Jun 20172017-06-182017-06-23 BibTeX | EndNote: XML, Text | RIS

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Nanoscale electrochemistry using oxide dielectric thin films as solid electrolytes
European Materials Research Meeting, WarsawWarsaw, Poland, 18 Sep 2017 - 22 Sep 20172017-09-182017-09-22 BibTeX | EndNote: XML, Text | RIS

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Donor-doped SrTiO3 as a model oxide - fundamental redox processes and functionalities
Annual Meeting of the Center for Dielectrics and Piezoelectrics, PennStatePennState, USA, 15 Apr 2018 - 17 Apr 20182018-04-152018-04-17 BibTeX | EndNote: XML, Text | RIS

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Donor-doped SrTiO3 as a model oxide - Fundamentals and functionalities
Materials Research Society Fall Meeting, BostonBoston, USA, 26 Nov 2017 - 1 Dec 20172017-11-262017-12-01 BibTeX | EndNote: XML, Text | RIS

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Fundamental ingredients of redox-based memristive switching in metal oxides
Materials Research Society Fall Meeting, BostonBoston, USA, 26 Nov 2017 - 1 Dec 20172017-11-262017-12-01 BibTeX | EndNote: XML, Text | RIS

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Essential aspects of redox-based memristive switching in metal oxides
Frontiers in Electroceramics Workshop 2017, BostonBoston, USA, 1 Dec 2017 - 1 Dec 20172017-12-012017-12-01 BibTeX | EndNote: XML, Text | RIS

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Influence of ReRAM Device Characteristics on the performance of Logic-in-Memory Concepts
International Conference on Memristive Materials, Devices & Systems, (Memrisys 2017), AthensAthens, Greece, 3 Apr 2017 - 6 Apr 20172017-04-032017-04-06 BibTeX | EndNote: XML, Text | RIS

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Tuning the surface structure and conductivity of niobium-doped rutile TiO2 single crystals via thermal reduction
5th Int. Conference on Oxide Materials for Electronic Engineering - fabrication, properties and application, OMEE-2017, LvivLviv, Ukraine, 29 May 2017 - 31 May 20172017-05-292017-05-31 BibTeX | EndNote: XML, Text | RIS

Letzte Änderung: 03.08.2022