Sonstiges 2017

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Perspectives for Polyoxometalates in Single-Molecule Electronics and Spintronics
[Print] Polyoxometalate chemistry / Eldik, Rudi van ; Cronin, Leroy First edition, Cambridge, MA : AP, Academic Press, an imprint of Elsevier, 2017, Cambridge, MA : AP, Academic Press, an imprint of Elsevier, Advances in inorganic chemistry 69, xii, 346 Seiten : Illustrationen, Diagramme ()   Download fulltextFulltext BibTeX | EndNote: XML, Text | RIS

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Chemie - Informationstechnik, Elektronik, Kommunikation
Unendliche Weiten - Kreuz und quer durchs Chemie-Universum Germany : Wiley-VCH 126 pp. () BibTeX | EndNote: XML, Text | RIS

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Overcoming the RESET Limitation in Tantalum Oxide-Based ReRAM Using an Oxygen-Blocking Layer
2017 IEEE International Memory Workshop (IMW), MontereyMonterey, CA, USA, 14 May 2017 - 17 May 20172017-05-142017-05-17 IEEE 15 pp. () [10.1109/IMW.2017.7939096]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Random telegraph noise analysis in redox-based resistive switching devices using KMC simulations
Simulation of Semiconductor Processes and Devices (SISPAD)
2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), KamakuraKamakura, Japan, 7 Sep 2017 - 9 Sep 20172017-09-072017-09-09
IEEE 5 pp. () [10.23919/SISPAD.2017.8085327]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Physical modeling of the electroforming process in resistive-switching devices
2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) : [Proceedings] - IEEE, 2017. - ISBN 978-4-86348-611-9978-4-86348-610-2
2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), KamakuraKamakura, Japan, 7 Sep 2017 - 9 Sep 20172017-09-072017-09-09
IEEE 10 pp. () [10.23919/SISPAD.2017.8085282]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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On the origin of the fading memory effect in ReRAMs
Power and Timing Modeling, Optimization and Simulation (PATMOS)
2017 27th International Symposium on Power and Timing Modeling, Optimization and Simulation (PATMOS), ThessalonikiThessaloniki, Greece, 25 Sep 2017 - 27 Sep 20172017-09-252017-09-27
IEEE 8 pp. () [10.1109/PATMOS.2017.8106963]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Thermal effects on the I-V characteristics of filamentary VCM based ReRAM-cells using a nanometer-sized heater
Non-Volatile Memory Technology Symposium (NVMTS)
2017 17th Non-Volatile Memory Technology Symposium (NVMTS), AachenAachen, Germany, 30 Aug 2017 - 1 Sep 20172017-08-302017-09-01
IEEE 6 pp. () [10.1109/NVMTS.2017.8171313]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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The Programmable Logic-in-Memory (PLiM) Computer
2016 Design, Automation & Test in Europe Conference & Exhibition (DATE),, DresdenDresden, Germany, 14 Mar 2017 - 18 Mar 20172017-03-142017-03-18 BibTeX | EndNote: XML, Text | RIS

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Resistive switching memory devices fromatomic layer deposited binary and ternaryoxide thin films
Jülich : Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag, Schriften des Forschungszentrums Jülich. Reihe Information / Information 52, X, 172 S. () = RWTH Aachen, Diss., 2017 OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Resistive switching memory devices from atomic layer deposited binary and ternary oxide thin films
100 pp. () = Dissertation, RWTH Aachen, 2017 BibTeX | EndNote: XML, Text | RIS

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Spectroscopic characterization of localvalence change processes in resistivelyswitching complex oxides
Jülich : Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag, Schriften des Forschungszentrums Jülich. Reihe Schlüsseltechnologien / Key Technologies 150, X, 206 S. () = RWTH Aachen, Diss., 2016 OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Development of ReRAM-based Devices for Logic- and Computation-in-Memory Applications
Jülich : Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag, Schriften des Forschungszentrums Jülich. Reihe Information / Information 51, x, 180 S. () = RWTH Aachen, Diss., 2017 OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Development of ReRAM-based Devices for Logic- and Computation-in-Memory Applications
180 pp. () = Dissertation, RWTH Aachen, 2017 BibTeX | EndNote: XML, Text | RIS

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Investigation of switching mechanism in Ta$_{2}$O$_{5}$-based ReRAM devices
Jülich : Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag, Schriften des Forschungszentrums Jülich. Reihe Information / Information 50, II, III, II, 138 S. () = RWTH Aachen, Diss., 2017 OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Redox processes and ionic transport in resistive switching binary metal oxides
Jülich : Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag, Schriften des Forschungszentrums Jülich. Reihe Information / Information 49, VII, 203 S. () = RWTH Aachen, Diss., 2016 OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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In situ studies of the growth and oxidation of complex metal oxides by pulsed laser deposition
Jülich : Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag, Schriften des Forschungszentrums Jülich. Reihe Schlüsseltechnologien / Key Technologies 140, IV, 159 S. () = RWTH Aachen, Diss., 2016 OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Investigation of switching mechanism in Ta2O5-based ReRAM devices
138 pp. () = RWTH Aachen, Dissertation, 2017 BibTeX | EndNote: XML, Text | RIS

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Microstructural control of sputtered transition metal oxide thin films for ReRAM applications
100 pp. () = Masterarbeit, RWTH Aachen, 2017 BibTeX | EndNote: XML, Text | RIS

Letzte Änderung: 03.08.2022