Referierte Zeitschriftenbeiträge 2014

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Influence of stoichiometry on the performance of MIM capacitors from plasma-assisted ALD Sr x Ti y O z films
Physica status solidi / A 211(2), 389 - 396 () [10.1002/pssa.201330101]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices
Journal of applied physics 116(6), 064503 - () [10.1063/1.4891831] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Directed Immobilization of Janus-AuNP in Heterometallic Nanogaps: a Key Step Toward Integration of Functional Molecular Units in Nanoelectronics
The journal of physical chemistry <Washington, DC> / C 118(46), 27142 - 27149 () [10.1021/jp5085179]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Scanning Tunneling Microscopy Investigation of Ultrathin Titanium Oxide Films Grown on Pt 3 Ti(111)
The journal of physical chemistry <Washington, DC> / C 118(12), 6186 - 6192 () [10.1021/jp4105213]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Finite-size versus interface-proximity effects in thin-film epitaxial $SrTiO_3$
Physical review / B 89(24), 241401 () [10.1103/PhysRevB.89.241401] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Simulation and comparison of two sequential logic-in-memory approaches using a dynamic electrochemical metallization cell model
Microelectronics journal 45(11), 1416 - 1428 () [10.1016/j.mejo.2014.09.012]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Interrelation of Sweep and Pulse Analysis of the SET Process in SrTiO$_3$ Resistive Switching Memories
IEEE electron device letters 1, 1 - 1 () [10.1109/LED.2014.2340016]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Spectroscopic Proof of the Correlation between Redox-State and Charge-Carrier Transport at the Interface of Resistively Switching Ti/PCMO Devices
Advanced materials 26(17), 2730 - 2735 () [10.1002/adma.201304054]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Competing strain relaxation mechanisms in epitaxially grown Pr$_{0.48}$Ca$_{0.52}$MnO$_{3}$ on SrTiO$_{3}$
APL materials 2(10), 106106 () [10.1063/1.4900817] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Understanding the role of single molecular ZnS precursors in the synthesis of In(Zn)P/ZnS nanocrystals
ACS applied materials & interfaces 6(20), 18233–18242 () [10.1021/am504988j]  Download fulltext Files  Download fulltextFulltext BibTeX | EndNote: XML, Text | RIS

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Study of atomic layer deposited ZrO 2 and ZrO 2 /TiO 2 films for resistive switching application
Physica status solidi / A 211(2), 301 - 309 () [10.1002/pssa.201330034]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Differential Adsorption of Gold Nanoparticles to Gold/Palladium and Platinum Surfaces
Langmuir 30(2), 574 - 583 () [10.1021/la404110y]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Band alignment at memristive metal-oxide interfaces investigated by hard x-ray photoemission spectroscopy
Physical review / B 90(11), 115312 () [10.1103/PhysRevB.90.115312] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Insights into Nanoscale Electrochemical Reduction in a Memristive Oxide: the Role of Three-Phase Boundaries
Advanced functional materials 24(28), 4466 - 4472 () [10.1002/adfm.201304233] BibTeX | EndNote: XML, Text | RIS

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Incommensurate antiferromagnetic order in the manifoldly-frustrated SrTb2O4 with transition temperature up to 4.28 K
Frontiers in Physics 2, 42 () [10.3389/fphy.2014.00042]  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Applicability of Well-Established Memristive Models for Simulations of Resistive Switching Devices
IEEE transactions on circuits and systems / 1 61(8), 2402 - 2410 () [10.1109/TCSI.2014.2332261] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Determination of the electrostatic potential distribution in Pt/Fe:SrTiO$_{3}$/Nb:SrTiO$_{3}$ thin-film structures by electron holography
Scientific reports 4, 6975 () [10.1038/srep06975] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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On the SET/RESET current asymmetry in electrochemical metallization memory cells
Physica status solidi / Rapid research letters 2, n/a - n/a () [10.1002/pssr.201308310]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Do dislocations act as atomic autobahns for oxygen in the perovskite oxide SrTiO$_{3}$?
Nanoscale 6(21), 12864 - 12876 () [10.1039/C4NR04083J]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Live demonstration: An associative capacitive network based on nanoscale complementary resistive switches
2014 IEEE International Symposium on Circuits and Systems (ISCAS), Melbourne VICMelbourne VIC, Australia, 1 Jun 2014 - 5 Jun 20142014-06-012014-06-05 Circuits and Systems 1, 439 () [10.1109/ISCAS.2014.6865162] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Origin of the SET Kinetics of the Resistive Switching in Tantalum Oxide Thin Films
IEEE electron device letters 35(2), 259 - 261 () [10.1109/LED.2013.2294868]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Low temperature reduction in Ta–O and Nb–O thin films
Journal of physics / D 47(13), 135301 - () [10.1088/0022-3727/47/13/135301]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Influence of Proton Exchange on LiNbO $_{3}$ Crystals Structure
Ferroelectrics 466(1), 1 - 7 () [10.1080/00150193.2014.894440] BibTeX | EndNote: XML, Text | RIS

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Thermal Treatment Effects in PbTiO $_{3}$ Crystals Studied by XPS and Electric Conductivity Tests
Ferroelectrics 466(1), 51 - 62 () [10.1080/00150193.2014.894866] BibTeX | EndNote: XML, Text | RIS

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Fast mapping of inhomogeneities in the popular metallic perovskite Nb:SrTiO 3 by confocal Raman microscopy
Physica status solidi / Rapid research letters 08(09), 781 - 784 () [10.1002/pssr.201409221]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Atomic Layer Deposition of Transparent VO $_{x}$ Thin Films for Resistive Switching Applications
Chemical vapor deposition 20(7-8-9), 291 - 297 () [10.1002/cvde.201407122] BibTeX | EndNote: XML, Text | RIS

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Giant electrode effect on tunnelling electroresistance in ferroelectric tunnel junctions
Nature Communications 5, 5414 () [10.1038/ncomms6414] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Chemical solution deposition of ferroelectric yttrium-doped hafnium oxide films on platinum electrodes
Applied physics letters 104(20), 202903 () [10.1063/1.4879283] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Nanobattery Effect in RRAMs—Implications on Device Stability and Endurance
IEEE electron device letters 35(2), 208 - 210 () [10.1109/LED.2013.2292113]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Impact of the Counter-Electrode Material on Redox Processes in Resistive Switching Memories
ChemElectroChem 1(8), 1287 - 1292 () [10.1002/celc.201402106] BibTeX | EndNote: XML, Text | RIS

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Redox-Based Resistive Switching Memories (ReRAMs): Electrochemical Systems at the Atomic Scale
ChemElectroChem 1(1), 26 - 36 () [10.1002/celc.201300165] BibTeX | EndNote: XML, Text | RIS

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Volatile resistance states in electrochemical metallization cells enabling non-destructive readout of complementary resistive switches
Nanotechnology 25(42), 425202 - () [10.1088/0957-4484/25/42/425202]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Physical origins and suppression of Ag dissolution in GeS x -based ECM cells21
Physical chemistry, chemical physics 16(34), 18217-18225 () [10.1039/C4CP01759E]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Impact of the interplay between nonstoichiometry and kinetic energy of the plume species on the growth mode of SrTiO 3 thin films
Journal of physics / D 47(3), 034009 - () [10.1088/0022-3727/47/3/034009]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Electrochemical dynamics of nanoscale metallic inclusions in dielectrics
Nature Communications 5, 4232 () [10.1038/ncomms5232] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Atomic Layer Deposition of TiO x /Al 2 O 3 Bilayer Structures for Resistive Switching Memory Applications
Chemical vapor deposition 20(7-8-9), 282 - 290 () [10.1002/cvde.201407123] BibTeX | EndNote: XML, Text | RIS

Letzte Änderung: 03.08.2022